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The paper presents a buffer stage used in a fast response LDO processed in a double-metal 0.8 μm CMOS process. The stage consists of a transconductance amplifier (OTA) in a unity-gain configuration. The buffer has a wideband architecture and is designed to drive the parasitic gate-to-source capacitance of the power transistor. Output impedance is lower than 2kΩ and current consumption is less than 20μA.