Referenced Items are not available for this document.
In this work we made an attempt of a direct experimental study of the hole capture by the resonant impurity level(s) in the strong enough electric field in p-Si. The idea was to investigate the modulation of the light absorption for boron-doped Si under the applied electric field. The change in the absorption for optical transitions between impurity states in the energy gap and between ground and resonant impurity levels was studied by using possibilities of a time-resolved spectroscopy. Analysis of experimental results allowed us to make a conclusion about capture of holes by the resonant levels in p-Si under the electric field
Published in:
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
(Volume:2
)
Date of Conference: 16-20 Sept. 2003
- Print ISBN:
- 0-7803-7948-9
- INSPEC Accession Number:
- 8301972
- Conference Location :
- Alushta, Crimea
- Digital Object Identifier :
- 10.1109/CAOL.2003.1251253
- Product Type:
- Conference Publications
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