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Optical study of electronic states in GaAsN

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10 Author(s)
Luo, X.D. ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; Yang, C.L. ; Huang, J.S. ; Xu, Z.Y.
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GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference: 11-13 Dec. 2002

Page(s):
587 - 590
ISSN :
1097-2137
Print ISBN:
0-7803-7571-8
INSPEC Accession Number:
7977280
Digital Object Identifier :
10.1109/COMMAD.2002.1237320
Product Type:
Conference Publications

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