By Topic

Design, fabrication and characterisation of an InP resonant tunneling bipolar transistor with double heterojunctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
1 Author(s)
M. Wintrebert-Fouquet ; Phys. Dept., Macquarie Univ., Sydney, NSW, Australia

An InP/In0.53Ga0.47As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In0.53Ga0.47As/AlAs resonant tunnelling diode which achieves a current density of 15 kA/cm2 at a peak voltage of 1.6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunction InGaAs/InP bipolar transistor. Results are presented for 3 μm × 3 μm emitter size integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 μA base current is observed in the common-emitter current-voltage characteristics at room temperature with a current density of 9.2 kA/cm2 and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a bistability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002