By Topic

Evolution of InGaAs/InP quantum well intermixing as a function of cap layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
C. Carmody ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; H. H. Tan ; C. Jagadish

InP- and InGaAs- capped single In0.53Ga0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 °C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002