Referenced Items are not available for this document.
An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 × 1018 with accuracies down to 1-2 % by exploiting optical plasma resonance effects.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Date of Conference: 11-13 Dec. 2002
- Page(s):
- 459 - 462
- ISSN :
- 1097-2137
- Print ISBN:
- 0-7803-7571-8
- INSPEC Accession Number:
- 7977254
- Digital Object Identifier :
- 10.1109/COMMAD.2002.1237289
- Product Type:
- Conference Publications
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