By Topic

Optical calibration of electron concentrations in heavily doped n-GaAs films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
J. Stiens ; Lab for Micro- & Optoelectronics, Vrije Univ., Brussels, Belgium ; V. Kotov ; G. Shkerdin ; G. Borghs
more authors

An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 × 1018 with accuracies down to 1-2 % by exploiting optical plasma resonance effects.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002