Referenced Items are not available for this document.
Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si+ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Date of Conference: 11-13 Dec. 2002
- Page(s):
- 429 - 432
- ISSN :
- 1097-2137
- Print ISBN:
- 0-7803-7571-8
- INSPEC Accession Number:
- 7977247
- Digital Object Identifier :
- 10.1109/COMMAD.2002.1237282
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
