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Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs

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4 Author(s)
S. W. Tan ; Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan ; W. T. Chen ; M. Y. Chu ; W. S. Lour

This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4∼1.5-μm U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-μm, 1.0-μm and 0.6-μm U-gate devices, respectively. The measured ft (fmax) at VGS=0 V and VDS=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-μm, 1.0-μm and 0.6-μm U-gate devices.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002