Referenced Items are not available for this document.
A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Date of Conference: 11-13 Dec. 2002
- Page(s):
- 315 - 318
- ISSN :
- 1097-2137
- Print ISBN:
- 0-7803-7571-8
- INSPEC Accession Number:
- 7977226
- Digital Object Identifier :
- 10.1109/COMMAD.2002.1237254
- Product Type:
- Conference Publications
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