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Optical transitions from SiO2/crystalline Si/SiO2 quantum wells

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5 Author(s)
Cho, E.C. ; Centre for Third Generation Photovoltaics, New South Wales Univ., Sydney, NSW, Australia ; Reece, P. ; Green, M.A. ; Corkish, R.
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Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO2 ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO2/Si/SiO2 quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002