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Optical study on the coupled GaAsSb/GaAs double quantum wells

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8 Author(s)
Jiang, D.S. ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; Liang, X.G. ; Chang, K. ; Bian, L.F.
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The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002