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Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures

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7 Author(s)
Gao, Q. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Tan, H.H. ; Jagadish, C. ; Sun, B.Q.
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In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 μm InGaAsN quantum well structure are also presented.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002