Referenced Items are not available for this document.
In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 μm InGaAsN quantum well structure are also presented.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Date of Conference: 11-13 Dec. 2002
- Page(s):
- 247 - 250
- ISSN :
- 1097-2137
- Print ISBN:
- 0-7803-7571-8
- INSPEC Accession Number:
- 7945955
- Digital Object Identifier :
- 10.1109/COMMAD.2002.1237238
- Product Type:
- Conference Publications
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