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Selective area epitaxy for photonic integrated circuits and advanced devices

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4 Author(s)
J. J. Coleman ; Illinois Univ., Urbana, IL, USA ; R. B. Swint ; T. S. Yeoh ; V. C. Elarde

Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002