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Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.
Date of Conference: 11-13 Dec. 2002