Referenced Items are not available for this document.
Highly oriented MoS2 films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800°C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800°C and 80°C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Date of Conference: 11-13 Dec. 2002
- Page(s):
- 185 - 188
- ISSN :
- 1097-2137
- Print ISBN:
- 0-7803-7571-8
- INSPEC Accession Number:
- 7977203
- Digital Object Identifier :
- 10.1109/COMMAD.2002.1237223
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