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Modelling of dark currents in LWIR HgCdTe photodiodes

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5 Author(s)
Nguyen, T. ; Sch. of Electr. & Comput. Eng., Western Australia Univ., Crawley, WA, Australia ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J.
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HgCdTe long-wavelength infrared (LWIR) photodiodes have been successfully fabricated using plasma induced junction formation. The performance of the devices were characterised through I-V measurements and analysed by modelling the dark current mechanisms which determine the I-V characteristic. Analytical models were used and a very close fit to the measured data at 80 K was achieved. The model included the effects of diffusion, trap-assisted tunnelling, band-to-band tunnelling, generation-recombination, and surface leakage current. The dark current modelling has identified material defects and non-ideal surface passivation as the factors limiting performance in HgCdTe LWIR photodiodes fabricated using plasma induced junction formation.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002

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