By Topic

High speed quantum dot lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
P. Bhattacharya ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; S. Ghosh ; Z. -K. Wu ; T. Norris

Self-organized quantum dot lasers, grown by MBE or MOVPE, have demonstrated superior characteristics such as large differential gain, ultra-low threshold current, high output power and large output tunability. However. these devices have successfully eluded researchers in the realization of large modulation bandwidths at room temperature. Typically, a bandwidth f-3 dB ∼5 to 7 GHz is measured in single-mode quantum dot lasers. In this paper, we will introduce and describe the technique of tunnel injection of carriers in quantum dot lasers and the benefits therefrom. Wc have recently demonstrated very high modulation bandwidth (>20 GHz), high T0 (363 K in 5° < T < 60°C and 202 K in 60° < T < 100°C), and low Auger recombination coefficients (∼ 3.3 × 10-29 cm6/s to 3.8 × 10-29 cm6/s in the temperature range 15°C < T < 85°C) in In0.4Ga0.6As/GaAs self-organized quantum dot tunnel injection lasers.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002