By Topic

SiGe pin-photodetectors integrated on silicon substrates for optical fiber links

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wohl, G. ; Inst. of Semicond. Eng., Stuttgart Univ., Germany ; Parry, C. ; Kasper, E. ; Jutzi, M.
more authors

100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003