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Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications

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6 Author(s)
Wong, H.-S.P. ; IBM Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Appenzeller, J. ; Derycke, V. ; Martel, R.
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The device and circuit implications of carbon nanotube field effect transistors (CNFET) as a logic technology are assessed. The salient device characteristics and fabrication techniques are described based on measured device parameters. The device/circuit performance of CNFET are estimated and the key technical challenges to developing the CNFET as a logic technology are discussed.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003

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