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A 10 b 150 MS/s 123 mW 0.18 /spl mu/m CMOS pipelined ADC

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8 Author(s)
Sang-Min Yoo ; Samsung Electron., Yongin, South Korea ; Jong-Bum Park ; Hee-Suk Yang ; Hyuen-Hee Bae
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A 10 b 150 MHz multi-bit-per-stage single-channel CMOS pipelined ADC, incorporating temperature- and supply-insensitive CMOS references and improved gate-bootstrapping techniques for a wideband SHA, achieves a SNDR of 52 dB and SFDR of 65 dB at 150 MS/s. The ADC, fabricated in 0.18 /spl mu/m CMOS, occupies an active die area of 2.2 mm/sup 2/ and consumes 123 mW at 1.8 V.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003

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