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A 1.0 V, 256 Mb SDRAM is designed in a 0.1 /spl mu/m CMOS technology. For low voltage applications, an offset compensated direct current sensing scheme improves refresh time as well as sensing performance. A charge-recycled precharge reuses the word-line discharge current to generate the boosted voltage required for equalization without charge pumping. At 1.0 V, the access time is 25 ns and the current is 15 mA.