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An above-IC RF-MEMS switch

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14 Author(s)
Saias, D. ; STMicroelectronics, Crolles, France ; Boret, S. ; Robert, P. ; Billard, C.
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A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003

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