Referenced Items are not available for this document.
A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.
Published in:
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Date of Conference: 13-13 Feb. 2003
- Page(s):
- 206 - 207 vol.1
- ISSN :
- 0193-6530
- Print ISBN:
- 0-7803-7707-9
- INSPEC Accession Number:
- 7791654
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/ISSCC.2003.1234269
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