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Sb-based heterostructure backward diodes with improved sensitivity

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7 Author(s)
R. G. Meyers ; Dept. of Electr. Eng., Notre Dame Univ., IN, USA ; P. Fay ; J. N. Schulman ; S. Thomas
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In this paper, a promising alternative to these devices is the heterostructure backward diode based on the InAs/AlSb/GaSb material system. We have achieved record measured sensitivities through W-band, with an average zero-bias sensitivity of 3513 V/W and a biased sensitivity of 8124 V/W over the range of 1 to 70 GHz when driven from a 50 /spl Omega/ source. The 3 dB bandwidth has been measured to be greater than 110 GHz; a projected bandwidth of 143 GHz has been determined based on an equivalent circuit derived from measured s-parameters.

Published in:

Device Research Conference, 2003

Date of Conference:

23-25 June 2003