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In-situ depth monitoring of the deep reactive ion etch process

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3 Author(s)
Imura, Y. ; Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA ; Li, B.X. ; Farmer, K.R.

We describe a laser-based technique to monitor the time multiplexed deep reactive ion etching of silicon. Mask and substrate etch rates, as well as mask quality information, can be extracted simultaneously and in-situ using a single laser beam system.

Published in:

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

Date of Conference:

30 June-2 July 2003

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