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Fabrication of a PMOS Transistor at NGEE ANN POLYTECHNIC's IC fabrication facility

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1 Author(s)
Philip, M. ; Microelectron. Design & Application Center, Ngee Ann Polytech., Singapore, Singapore

NGEE ANN POLYTECHNIC's IC Fabrication Facility (NPFab) was set up in 1998 with the mission to train manpower for the microelectronics industry of Singapore. The facility has been used since then to provide practical training in nearly all aspects of wafer fabrication to final-year students. In addition to equipment and process training on individual stations, interested students undertake final-year projects in the clean room. These involve the construction and testing of microelectronic devices and circuits. This paper describes one such work to build and test a PMOS Metal Gate Transistor. Details of the process flow and test strategies utilized are provided. Problems encountered and solutions taken are reported. The impact of the exercise on student learning is assessed.

Published in:

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

Date of Conference:

30 June-2 July 2003

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