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The effect of body contact size on the control of floating body voltage in body tied to source partially depleted (BTS PD) SOI MOSFET has been investigated using three dimensional simulations using non-isothermal drift diffusion model. The results show that using smaller contacts (0.05 μm) are as effective as larger contacts (0.35 μm) while maintaining higher current drive. To accelerate simulation, a simple two-dimensional model to investigate BTS contacts in SOI MOSFETs was developed. Simulation results using the two-dimensional model show the same trend as the full three-dimensional simulations at less than 1% of the computation time.
Date of Conference: 30 June-2 July 2003