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An overview of Double-Gate MOSFETs

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1 Author(s)
G. W. Neudeck ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

The Double-Gate (DG) Fully Depleted (FD) SOI MOSFET, and its many implementations, is the leading device candidate for Silicon nano-scale CMOS. Their main characteristics, as compared to the single gate bulk MOSTET, are less S/D capacitance, larger saturated current drive, smaller short channel effects (DIBL), scalability to L=10 nm, near ideal subthreshold slopes (S), and the possibility of electrically adjustable threshold voltages.

Published in:

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

Date of Conference:

30 June-2 July 2003