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High voltage bandgap reference design using SOI technology

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8 Author(s)
V. Sukumar ; Microelectron. Res. & Commun. Inst, Idaho Univ., Moscow, ID, USA ; S. Subramanium ; D. Pan ; K. Buck
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A high voltage bandgap reference circuit has been designed and implemented in an SOI CMOS technology. The design is capable of maintaining a stable value, in the temperature range from 0°C to 100°C. The design is also validated against process and power supply fluctuations. An innovative approach replaces the traditional lateral pnp transistor method.

Published in:

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

Date of Conference:

30 June-2 July 2003