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Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs

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9 Author(s)
Jae-Yoon Sim ; Memory Product & Technol. Div., Samsung Electron., Hwasung, South Korea ; Young-Gu Gang ; Kyu-Nam Lim ; Joong-Yong Choi
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A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003