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A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process

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20 Author(s)
McAdams, H. ; Texas Instrum., Dallas, TX, USA ; Acklin, R. ; Blake, T. ; Fong, J.
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A low-voltage (1.3V), 64 Mbit Ferroelectric Random Access Memory using a 1-transistor, 1-capacitor (1T1C) cell is demonstrated. This is the largest FRAM memory demonstrated to date. The memory is constructed using a state-of-the-art 130 nm transistor and a five-level Cu/FSG interconnect process. Only two additional masks are required for integration of the ferroelectric module into a single-gate oxide, low-voltage logic process. Address access time for the memory is less than 30 ns while consuming 0.57 mW/MHz at 1.37 V. An eFRAM density of 1.13 Mb/mm/sup 2/ is achieved with a cell size of 0.54 /spl mu/m/sup 2/ and capacitor size of 0.25 /spl mu/m/sup 2/.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003

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