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A novel access scheme suppressing disturbance for a cross-point type ferroelectric memory

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9 Author(s)
N. Sakai ; Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Gifu, Japan ; Y. Ishizuka ; S. Matsushita ; Y. Takano
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To resolve the disturbance problem of stored data being destroyed in a cross-point type FeRAM, which has prevented it from being put into practical use, we propose a novel access scheme for read-restore sequence. The unique point of this scheme is two restore sequences that are dynamically changed according to read-out data. Based on this scheme, the reduction of polarization induced by the disturbance is suppressed to be less than 17% after stress iteration of 10/sup 9/ times.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003