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Destructive-read random access memory system buffered with destructive-read memory cache for SoC applications

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5 Author(s)
Ji, B.L. ; IBM Microelectron., Hopewell Junction, NY, USA ; Munetoh, S. ; Chorng-Lii Hwang ; Wordeman, M.
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This paper describes a novel random access memory system. The system is based on a destructive-read memory buffered by a destructive-read memory cache for hidden write back. SRAM comparable random access cycle time (tRC) is achieved, as tRC of the architecture is limited only by the destructive-read time of the memory array. By using a DRAM array as cache, the silicon area is reduced by about 25% from SRAM-cache system. Write back algorithms have been proved by mathematical models, and confirmed by simulations.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003