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This paper presents high-Q and high-density 3-dimensional VPP (vertical parallel plate) capacitors fabricated in a 0.12 μm SOI CMOS technology. An effective capacitance density of 1.76 fF/μm2 is obtained. A quality-factor of 22 at 1 GHz is obtained for a 20 pF VPP capacitor. Also, a VPP capacitor model is proposed for the first time to design the VPP capacitor.
Date of Conference: 12-14 June 2003