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Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

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3 Author(s)
Zhao, J.H. ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; Alexandrov, P. ; Li, X.

This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-μm n-type epilayers doped to 5.6 × 10/sup 14/ cm/sup -3/ through the use of a multistep junction termination extension. The blocking voltage substantially surpasses the former 4H-SiC SBD record of 4.9 kV. A current density of 48 A/cm2 is achieved with a forward voltage drop of 6 V. The Schottky barrier height, ideality factor, and electron mobility for this very thick epilayer are reported. The SBD's specific-on resistance is also reported.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 6 )