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PVD HfO2 for high-precision MIM capacitor applications

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7 Author(s)
Sun Jung Kim ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Byung Jin Cho ; Ming Fu Li ; Xiongfei Yu
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Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10/sup -8/ A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 6 )