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Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

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14 Author(s)
Chou, Y.C. ; Northrop Grumman Space Technol., Redondo Beach, CA, USA ; Leung, D. ; Lai, R. ; Grundbacher, R.
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The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-μm T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T1 = 200 /spl deg/C and T2 = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N2 ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 × 106 h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-μm InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-μm pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 6 )