By Topic

Large-signal linearity in III-N MOSDHFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
A. Tarakji ; Sensor Electron. Technol. (SET) Inc., Columbia, SC, USA ; H. Fatima ; X. Hu ; J. -P. Zhang
more authors

The authors report the output RF signal distortions in the novel SiO/sub 2/-AlGaN-InGaN-GaN metal-oxide-semiconductor double heterostructure FET (MOSDHFET) device structure. Their comparative studies of MOSDHFETs and Schottky gate type DHFETs fabricated on the same wafer show significantly improved RF output signal linearity in MOSDHFETs at high-input signals. At the RF output powers close to saturation, the relative level of the second and third harmonic powers in MOSDHFETs was found to be less than -30 dB, which is about 15-20 dB lower as compared to identical geometry DHFET. This improvement is attributed to a better linearity of the MOSDHFET current-gate voltage characteristics.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 6 )