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Nb/AlOx/Al/AlOx/Nb double-barrier junctions with high critical current densities: influence of barrier asymmetry

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4 Author(s)
Tolpygo, S.K. ; Dept. of Phys. & Astron., State Univ. of New York, Elmsford, NY, USA ; Brinkman, A. ; Golubov, A.A. ; Kupriyanov, M.Yu.

In order to be useful for high speed digital circuit applications, double-barrier SINIS or SIS'IS junctions must be nonhysteretic, possess high critical current densities (jc>1 kA/cm2) and high characteristic voltages Vc∼0.3 mV, where Vc=IcRsub and Rsub is a characteristic (subgap) resistance damping the junction in the operating range of voltages. This requires high transparencies of barriers and small interlayer thicknesses. Data are presented on fabrication and Josephson properties of SIS'IS junctions with jc up to 10 kA/cm2 at 4.2 K. It is shown that the asymmetry of double-barrier structure starts playing a major role at high jc (i.e., at thin, high transparency barriers) as evidenced by the temperature dependences of the critical current, the value of the current deficit in the I-V characteristics, and the appearance of multiple Andreev reflection peaks in differential conductance of the junctions.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:13 ,  Issue: 2 )

Date of Publication:

June 2003

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