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Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

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11 Author(s)
Min Yang ; Res. Div., IBM Semicond. R&D Center, Yorktown Heights, NY, USA ; Gusev, E.P. ; Meikei Ieong ; Gluschenkov, O.
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Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness less than 3 nm. Hole mobility enhancement of /spl ges/160% has been observed for both oxynitride and HfO2 gate dielectrics on [110] surfaces compared with [100]. CMOS drive current is nearly symmetric on [110] orientation without any degradation of subthreshold slope. For HfO2 gate dielectrics, an approximately 68% enhancement of pMOSFET drive current has been demonstrated on [110] substrates at L/sub poly/=0.12 μm, while current reduction in nMOS is around 26%.

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Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )