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Impact of poly-gate depletion on MOS RF linearity

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3 Author(s)
Choi, Chang-Hoon ; Center for Integrated Syst., Stanford Univ., CA, USA ; Zhiping Yu ; Dutton, R.W.

The distortion behavior for thin oxide MOS transistors can be degraded due to polysilicon-gate depletion effects. The nonlinear, bias-dependent gate capacitance for thin oxide MOSFET's results in significant 2nd-order derivatives in gate capacitance, (/spl part//sup 2/C(V/sub gs/)//spl part/V/sub gs//sup 2/), which in turn results in substantial 3rd-order derivative contributions to drain current, (/spl part//sup 3/I/sub ds///spl part/V/sub gs//sup 3/). This may restrict the use of very-thin oxide MOSFET's in RF applications.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )