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A high current gain 4H-SiC NPN power bipolar junction transistor

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5 Author(s)
Jianhui Zhang ; ECE Dept., Rutgers Univ., Piscataway, NJ, USA ; Y. Luo ; P. Alexandrov ; L. Fursin
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This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150/spl deg/C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm2) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm2, based on a drift layer design of 12 μm doped to 6×10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm2 to 239 A/cm2 (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm2.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 5 )