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Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

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5 Author(s)
M. Miura ; Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan ; S. Nakamura ; J. Suda ; T. Kimoto
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Using epitaxial multiple p-n junction structures of 4H-SiC, lateral super junction diodes were fabricated for the first time. The breakdown voltage of the device was 400 V, which is more than 3/spl times/ higher than the theoretical value calculated for a device with uniformly-doped drift layer (130 V), indicating the effective operation of the super junction structure.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 5 )