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Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

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11 Author(s)
J. Pan ; Adv. Micro Devices Inc., Sunnyvale, CA, USA ; C. Woo ; Chih-Yuh Yang ; U. Bhandary
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This work reports the first replacement (damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity. The ALD process has the advantage of reducing the stress and radiation damage to the gate oxide. The damascene process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 5 )