Referenced Items are not available for this document.
This work reports the first replacement (damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity. The ALD process has the advantage of reducing the stress and radiation damage to the gate oxide. The damascene process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.
Published in:
Electron Device Letters, IEEE
(Volume:24
,
Issue:
5
)
Date of Publication: May 2003
- Page(s):
- 304 - 305
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7688709
- Digital Object Identifier :
- 10.1109/LED.2003.812574
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2003
- Issue Date :
- May 2003
- Sponsored by :
- IEEE Electron Devices Society
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