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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:24 Issue:5 Help

Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz

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3 Author(s)
Hafez, W. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Lai, J.-W. ; Milton Feng

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 /spl times/16 /spl mu/m have demonstrated a maximum current gain cutoff frequency f/sub T/ of 377 GHz with a simultaneous maximum power gain cutoff frequency f/sub MAX/ of 230 GHz at the current density Jc of 650 kA/cm/sup 2/. Typical BV/sub CEO/ values exceed 3.7 V.

Published in:
Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )

Date of Publication: May 2003

Page(s):
292 - 294
ISSN :
0741-3106
INSPEC Accession Number:
7688705
Digital Object Identifier :
10.1109/LED.2003.812530
Date of Current Version :
09 July 2003
Issue Date :
May 2003
Sponsored by :
IEEE Electron Devices Society

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