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10-W/mm AlGaN-GaN HFET with a field modulating plate

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6 Author(s)
Ando, Y. ; Photonic & Wireless Devices Res. Labs., NEC Corp., Otsu, Japan ; Okamoto, Y. ; Miyamoto, H. ; Nakayama, T.
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AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate. The gate-drain breakdown voltage (BV/sub gd/) was significantly improved by employing an FP electrode, and the highest BV/sub gd/ of 160 V was obtained with an FP length (L/sub FP/) of 1 /spl mu/m. The maximum drain current achieved was 750 mA/mm, together with negligibly small current collapse. A 1-mm-wide FP-FET (L/sub FP/=1 /spl mu/m) biased at a drain voltage of 65 V demonstrated a continuous wave saturated output power of 10.3 W with a linear gain of 18.0 dB and a power-added efficiency of 47.3% at 2 GHz. To our knowledge, the power density of 10.3 W/mm is the highest ever achieved for any FET of the same gate size.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )

Date of Publication:

May 2003

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