Referenced Items are not available for this document.
We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area of 3390 μm2 exhibited 44% power-added-efficiency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.
Published in:
Microwave Symposium Digest, 2003 IEEE MTT-S International
(Volume:3
)
Date of Conference: 8-13 June 2003
- Page(s):
- 2205 - 2208 vol.3
- ISSN :
- 0149-645X
- Print ISBN:
- 0-7803-7695-1
- INSPEC Accession Number:
- 7686393
- Digital Object Identifier :
- 10.1109/MWSYM.2003.1210602
- Product Type:
- Conference Publications
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