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Basic mechanisms and modeling of single-event upset in digital microelectronics

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2 Author(s)
Dodd, P.E. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Massengill, L.W.

Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 3 )