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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:50 Issue:3 Help

Total ionizing dose effects in MOS oxides and devices

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2 Author(s)
Oldham, T.R. ; NASA Goddard Space Flight Center/QSS Group, Greenbelt, MD, USA ; McLean, F.B.

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

Published in:
Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 3 )

Date of Publication: June 2003

Page(s):
483 - 499
ISSN :
0018-9499
INSPEC Accession Number:
7682031
Digital Object Identifier :
10.1109/TNS.2003.812927
Product Type:
Journals & Magazines
Date of Current Version :
09 July 2003
Issue Date :
June 2003
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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