Improvement of responsivity of a room temperature 10.6 mu m sensor using an intra-band transition

An improvement in the responsivity of room temperature 10.6- mu m sensors based on an intra-band transition is proposed. The sensor, fabricated in p-type germanium, forms a resonator. An improvement of 20 dB in the responsivity is obtained at zero bias voltage. This is comparable to values for sensors based on uncooled HgCdTe.<
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