Cart (Loading....) | Create Account
Close category search window
 

Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)

Electrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900°C 1s activation anneal of Ph-doped 680°C-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg = 1.6E-04 A/cm2 at |VFB-1| which is > 2 orders of magnitude lower than SiO2 with poly-Si gate. A minimal degradation of leakage current after 900°C activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD HfO2 gate stack. Nevertheless, upon 1000°C activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was > 2 order of magnitude higher compared to a 900°C activation anneal.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.